학술논문
Spin Qubits in Silicon FinFET Devices
Document Type
Conference
Author
Fuhrer, A.; Aldeghi, M.; Berger, T.; Camenzind, L. C.; Eggli, R. S.; Geyer, S.; Harvey-Collard, P.; Hendrickx, N. W.; Kelly, E.G.; Massai, L.; Mergenthaler, M.; Muller, P.; Kuhlmann, A. V.; Patlatiuk, T.; Paredes, S.; Schupp, F. J.; Salis, G.; Sommer, L.; Tsoukalas, K.; Trivino, N. Vico; Warburton, R. J.; Zumbuhl, D. M.
Source
2022 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2022 International. :14.1.1-14.1.4 Dec, 2022
Subject
Language
ISSN
2156-017X
Abstract
We discuss a custom bulk FinFET platform for implementing fast and dense hole spin qubits. Using a double quantum dot with two confined holes, single- and two-qubit control is demonstrated by applying electrical microwave signals to one of the gate electrodes. From these experiments we estimate that both types of gate operations can be realized with gate times in the few nanoseconds regime. In an outlook we discuss how to further scale this technology towards 2D arrays.