학술논문
RF Characterization of Vertical InAs Nanowire Wrap-Gate Transistors Integrated on Si Substrates
Document Type
Periodical
Author
Source
IEEE Transactions on Microwave Theory and Techniques IEEE Trans. Microwave Theory Techn. Microwave Theory and Techniques, IEEE Transactions on. 59(10):2733-2738 Oct, 2011
Subject
Language
ISSN
0018-9480
1557-9670
1557-9670
Abstract
We present dc and RF characterization of InAs nanowire field-effect transistors (FETs) heterogeneously integrated on Si substrates in a geometry suitable for circuit applications. The FET consists of an array of 182 vertical InAs nanowires with about 6-nm HfO$_{2}$ high-$k$ gate dielectric and a wrap-gate length of 250 nm. The transistor has a transconductance of 155 mS/mm and an on-current of 550 mA/mm at a gate voltage of 1.5 V and a drain voltage of 1 V. $S$-parameter measurements yield an extrinsic cutoff frequency of 9.3 GHz and a extrinsic maximum oscillation frequency of 14.3 GHz.