부산대학교 도서관

The behavior of Cu(In,Ga)Se 2 (CIGS) solar cells under low flux concentration is being investigated for two complementary reasons. First, pairing photovoltaic devices with inexpensive low flux optical concentration elements can be a rational pathway towards systems that yield a low levelized cost of electricity (LCE). Second, characterization of photovoltaic films under elevated flux levels can be an effective tool for helping to understand the nature of recombination and other parasitic loss mechanisms in these device structures. In this paper we report on a CIGS device that achieved a record efficiency of 23.3% at 14.7 Suns optical concentration and outline a strategy for future work intended to use characterization of devices under elevated flux to explore the physical mechanisms currently limiting the performance of CI(G)S solar cells.