학술논문
High-Brightness Blue & Green LEDs Grown by MBE on ZnSe Substrates
Document Type
Conference
Author
Source
IEEE/LEOS 1995 Digest of the LEOS Summer Topical Meetings. Flat Panel Display Technology LEOS Summer topical meetings Flat Panel Display Technology/Technologies for a Global Information Infrastructure/ICs for New Age Lightwave Communications/RF Optoelectronics, 1995 Digest of the LEOS Summer Topical Meetings. :37-38 1995
Subject
Language
Abstract
High-brightness blue and green tight-emitting diodes (LEDs) operating at peak wavelengths in the range 489 -514 nm have been successfully synthesized, processed, and tested. The high-brightness LEDs are Il-VI heterostructures grown by molecular beam epitaxy (MBE) at NCSU using (100) ZnSe substrates produced at Eagle-Picher Laboratory by the Seeded Physical Vapor Transport (SPVT TM) process.