학술논문

A High Linearity, 2.8 GS/s, 10-bit Accurate, Sample and Hold Amplifier in 130 nm SiGe BiCMOS
Document Type
Conference
Source
2018 IEEE International Symposium on Circuits and Systems (ISCAS) Circuits and Systems (ISCAS), 2018 IEEE International Symposium on. :1-4 May, 2018
Subject
Components, Circuits, Devices and Systems
Power, Energy and Industry Applications
Signal Processing and Analysis
Bandwidth
Linearity
Distortion
Heterojunction bipolar transistors
Radio frequency
Silicon germanium
BiCMOS integrated circuits
RF and mixed signal IC design
RF front-ends
sampling circuits
Software-defined
Track-and-hold
Sample-and-hold
distortion cancellation
BiCMOS
SiGe
Language
ISSN
2379-447X
Abstract
This article presents a highly linear BiCMOS sample and hold amplifier (SHA) providing 2.8 GS/s intermediate frequency (IF) sampling for a 1 GHz bandwidth input spanning from 1.5 GHz to 2.5 GHz. A single-transistor hold-mode feedthrough cancellation technique is implemented to remove the distortion resulting from the nonlinear parasitic capacitance at the sampling node. The SHA is designed in a mainstream 130 nm BiCMOS technology using SiGe heterojunction bipolar transistors (HBTs) to buffer and sample the wide-band input. Potential inclusion of this BiCMOS SHA in a subsequent high-speed ADC design provides the possibility for a monolithic high performance converter solution. This independent sampling front-end occupies a core chip area of 0.6 mm 2 . The SHA is a pseudo-differential open-loop design that includes two cascaded track-and-hold amplifiers (THA), a high-speed clock driver, and externally adjustable current mirror biases. Measurements of the fabricated SHA show a 10-bit effective resolution across the 1 GHz bandwidth and > 61 dBc spurious free dynamic range (SFDR).