학술논문

A fully-integrated S/C band transmitter in 45nm CMOS/ 0.2gm GaN heterogeneous technology
Document Type
Conference
Source
2017 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) Compound Semiconductor Integrated Circuit Symposium (CSICS), 2017 IEEE. :1-4 Oct, 2017
Subject
Components, Circuits, Devices and Systems
Transmitters
Gallium nitride
Power amplifiers
Phase modulation
Inverters
Frequency modulation
Power generation
CMOS integrated circuits
phase modulation
power amplifiers
telemetry
transmitters
Language
ISSN
2374-8443
Abstract
A fully-integrated transmitter is presented in DARPA's DAHI process technology, featuring heterogeneous integration of 45nm SOI CMOS and 0.2pm GaN technologies. This transmitter is capable of transmitting SOQPSK-TG telemetry waveforms across 2–5 GHz with a peak transmitter power efficiency of 41.32% and peak output power of 32.93 dBm. A reconfigurable CMOS phase modulator is implemented to provide 6-bit phase resolution across the entire output frequency range, and a wide-swing CMOS buffer was designed to drive the GaN power amplifier. The GaN PA features a three-stage design, featuring a differential CML buffer, push-pull inverting buffer, and a class-E switch-mode power amplifier to efficiently amplify the signal. To the authors' knowledge, this is the first fully-integrated transmitter combining CMOS and GaN technology demonstrated in literature.