학술논문

Characterization and modeling of run-time techniques for leakage power reduction
Document Type
Periodical
Source
IEEE Transactions on Very Large Scale Integration (VLSI) Systems IEEE Trans. VLSI Syst. Very Large Scale Integration (VLSI) Systems, IEEE Transactions on. 12(11):1221-1233 Nov, 2004
Subject
Components, Circuits, Devices and Systems
Computing and Processing
Runtime
Silicon on insulator technology
Circuits
Threshold voltage
Very large scale integration
Leakage current
CMOS technology
FinFETs
Subthreshold current
Fabrication
Data preserving
leakage power
low power
power estimation
run-time leakage reduction
technology scaling
very large scale integration (VLSI) circuits
Language
ISSN
1063-8210
1557-9999
Abstract
While some leakage power reduction techniques require modification of the process technology, others are based on circuit-level optimizations and are applied at run-time. We focus our study on the latter and compare three techniques: input vector control, body bias control, and power supply gating. We determine their limits and benefits in terms of the potential leakage reduction, performance penalty, and area and power overhead. The leakage power savings trends considering technology scaling are also presented. Due to the differences in the properties of datapath logic and memory structures, different implementations are recommended. Finally, the use of the "minimum idle time" parameter, as a metric for evaluating different leakage control mechanisms, is shown.