학술논문

InAlGaN/GaN HEMT technology for Ka band applications

Document Type

Conference

Author

Delage, Sylvain L.; Piotrowicz, S.; Patard, O.; Jacquet, J-C.; Gamarra, P.; Dua, C.; Altuntas, P.; Michel, N.; Charier, E.; Potier, C.; Oualli, M.; Lacam, C.; Chang, C.; Blanck, H.; Fellon, P.; Floriot, D.

Source

2018 22nd International Microwave and Radar Conference (MIKON) Microwave and Radar Conference (MIKON), 2018 22nd Internationa. :234-237 May, 2018

Subject

Aerospace
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Fields, Waves and Electromagnetics
Signal Processing and Analysis
HEMTs
Gallium nitride
Metals
Power amplifiers
Logic gates
Performance evaluation
Lattices
Device
GaN
Microwave
Ka Band

Language

Abstract

Recent results obtained using InAlGaN/GaN HEMT technology. Material advantages of this heterostructure are depicted and some technological aspects are described. Low lagging effects and high electric field capability is presented. Power densities up to 10W.mm −1 have been obtained at 30GHz. MMIC power amplifiers are briefly reported.

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