학술논문
Relationship between junction radius and reverse leakage of silicide Schottky-barrier diodes
Document Type
Periodical
Author
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 31(7):895-899 Jul, 1984
Subject
Language
ISSN
0018-9383
1557-9646
1557-9646
Abstract
Unguarded Schottky-barrier diodes exhibit excessive leakage current in the reverse-current direction. A portion of this excess current has always been attributed to sharp-edge effects. In this paper, the sharp-edge-related excess reverse current is attributed to the additional barrier lowering that is due to the electric-field enhancement present near the diode edges. Mathematical relationships describing the effect of the edge radius on the I-V characteristics of unguarded diodes are developed. These relationships are then used to model an unguarded Schottky-barrier diode. The correlation between the junction radius and the diode characteristics was found to be strong in the reverse-current direction. In the foward direction, the diode characteristics were not greatly affected, and thus the large diode-quality factors of unguarded diodes cannot be attributed to the sharp-edge effect. A comparison is made between the experimental characteristics of Pd 2 Si/ nSi and VSi 2 /nSi diodes and those obtained from modeling.