학술논문

Towards a sensorless current and temperature monitoring in MOSFET-based H-bridge
Document Type
Conference
Source
IEEE 34th Annual Conference on Power Electronics Specialist, 2003. PESC '03. Power electronics specialists conference Power Electronics Specialist Conference, 2003. PESC '03. 2003 IEEE 34th Annual. 2:901-906 vol.2 2003
Subject
Power, Energy and Industry Applications
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Robotics and Control Systems
Signal Processing and Analysis
Computing and Processing
Temperature sensors
Temperature measurement
Electrical resistance measurement
MOSFETs
Sensorless control
Temperature control
Diodes
Power measurement
Semiconductor device measurement
Voltage measurement
Language
ISSN
0275-9306
Abstract
Chip temperature in power MOSFETs is commonly obtained (e.g. for thermal characterisation purposes) by feeding a known, controlled low DC-current in the body diode and measuring the forward-voltage drop. Drain current might be estimated by a voltage measurement across drain and source terminals, on-state resistance acting as a shunt, assuming that the temperature is known and constant. Such voltage-based measurements are attractive, but dependencies limit their application to laboratory environment. In industrial converters, neither temperature nor current are known a priori. Here we show that by combining the two techniques, previous limitations are overcome. Temperature and current come as two separate polynomial expressions. The application to a low-cost monitoring system is presented and results are discussed. The validity of the system over the full temperature and current ranges is verified and a confidence map is given.