부산대학교 도서관

For the first time, relative intensity noise (RIN) of an InAs-InP(113)B quantum dot (Q-Dot) laser is examined theoretically under the gain-switching condition with the application of a Gaussian pulse beam (GPB) to excited state (Exs) of the laser. The multi-population rate equations considering nonlinear gain are solved by the Runge–Kutta method. Noises are added to rate equations as Langevin noise sources and a different method is applied here for the addition of these noise sources to equations. In this method, new rate equations are defined to eliminate the cross-correlations between the noise sources to make them independent and simulate with independent white Gaussian random variables. Obtained results showed that RIN decreases with the increasing ac peak current and the increasing inhomogeneous broadening. It was also observed that further RIN reduction of about 30 dB/Hz and gain-switched short pulses with a high power due to Exs emission being obtained with the application of GPB to Exs of the laser. Moreover, it was demonstrated that while carrier noise generated from Exs and ground state (Grs) affect the RIN spectrum, there is no effect of wetting layer (Wly) carrier noise.