학술논문
Large-signal millimeter-wave CMOS modeling with BSIM3
Document Type
Conference
Author
Source
2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers Radio frequency integrated circuits Radio Frequency Integrated Circuits (RFIC) Symposium, 2004. Digest of Papers. 2004 IEEE. :163-166 2004
Subject
Language
ISSN
1529-2517
Abstract
A large-signal modeling methodology based upon a modified BSIM3v3 transistor model is presented which targets MM-wave CMOS applications. The effect of parasitics on the high-frequency operation of CMOS transistors is discussed, and a standard intrinsic BSIM3v3 model card is augmented with lumped elements to model these effects. Core BSIM parameters are extracted to match the measured DC I-V curves of a fabricated common-source NMOS transistor. Measured S-parameters are used to extract external parasitic component values to obtain a bias-dependent small-signal MM-wave frequency fit up to 65 GHz. The large-signal MM-wave accuracy of the model is verified by measuring the output harmonics power under large-signal excitation. Comparisons of measurements with the simulations show good agreement up to 60 GHz.