학술논문

Comparison of SEM and HRTEM CD measurements extracted from test-structures having feature linewidths from 40 nm to 240 nm
Document Type
Conference
Source
Proceedings of the 2005 International Conference on Microelectronic Test Structures, 2005. ICMTS 2005. Microelectronic Test Structures Microelectronic Test Structures, 2005. ICMTS 2005. Proceedings of the 2005 International Conference on. :11-16 2005
Subject
Components, Circuits, Devices and Systems
Testing
Scanning electron microscopy
Metrology
Silicon
Calibration
Uncertainty
Laboratories
Atomic force microscopy
Data mining
NIST
Language
ISSN
1071-9032
2158-1029
Abstract
CD (critical dimension) measurements have been extracted from SEM (scanning electron microscope) and HRTEM (high resolution transmission electron microscopy) images of the same set of monocrystalline silicon features having linewidths between 40 and 240 nm. The silicon features are incorporated into a new test structure that has been designed to facilitate this type of CD-metrology study. The purpose of the work was to characterize the calibration statistics of SEM transfer-metrology when HRTEM is used as primary metrology in CD reference material calibration.