학술논문

Impact of pocket implant on MOSFET mismatch for advanced CMOS technology
Document Type
Conference
Source
Proceedings of the 2004 International Conference on Microelectronic Test Structures (IEEE Cat. No.04CH37516) Microelectronic test structures Microelectronic Test Structures, 2004. Proceedings. ICMTS '04. The International Conference on. :123-126 2004
Subject
Components, Circuits, Devices and Systems
CMOS technology
Implants
MOSFET circuits
Fluctuations
MOS devices
Testing
Geometry
Circuit synthesis
Semiconductor device modeling
Technology forecasting
Language
Abstract
This paper deals with MOS transistors mismatch for advanced 120 nm and 90 nm CMOS technologies. In particular we demonstrate pocket implant impact on the gate contribution that becomes more and more important with the gate oxide thickness reduction. Such a phenomenon can appear as a limit for matching improvement with CMOS technologies evolution.