학술논문
New method for non destructive snap-back characterization in multi-finger power MOSFETs
Document Type
Conference
Source
2008 IEEE International Conference on Microelectronic Test Structures Microelectronic Test Structures, 2008. ICMTS 2008. IEEE International Conference on. :137-141 Mar, 2008
Subject
Language
ISSN
1071-9032
2158-1029
2158-1029
Abstract
A non destructive conductance-based electrical characterization method of the snap-back phenomenon has been implemented to investigate multi-finger power MOSFETs. The context of our study is presented, then the specific test structures and the measurement methodology are shown. The robustness and repeatability of our approach is demonstrated on a variety of power MOSFETs regarding to some technological parameters. Comparisons between our results and the ones issued from a destructive characterization are also drawn. The temperature's influence on snap-back is evidenced as well as the measurement's repeatability.