학술논문
Indium and nitrogen K-edge X-ray absorption spectroscopy of InxGai-xN
Document Type
Conference
Author
Source
2016 5th International Symposium on Next-Generation Electronics (ISNE) Next-Generation Electronics (ISNE), 2016 5th International Symposium on. :1-2 May, 2016
Subject
Language
ISSN
2378-8607
Abstract
InGaN thin films with near entire indium composition range have been successfully grown on GaN/sapphire (0001) by molecular beam epitaxy (MBE). Samples are studied by X-ray absorption fine structure (XAFS) and X-ray absorption near-edge structure (XANES), respectively. They are all obtained with smooth data. Based on JFEFF calculation program, the Nitrogen K-edge X-Ray absorption energy is about 400eV, which matches with the measurement data.