학술논문
Challenges toward Low-Power SOT-MRAM
Document Type
Conference
Author
Source
2021 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2021 IEEE International. :1-7 Mar, 2021
Subject
Language
ISSN
1938-1891
Abstract
Spin-orbit-torque magnetic random-access memory (SOT-MRAM) equipped with sub-I-V switching voltage [1, 2] is considered to be one of the promising candidates for next-generation low-power, high speed and non-volatile embedded cache memory applications. To fulfill these performance requirements, however, there are many technical bottlenecks to be conquered, such as SOT efficiency and scalability. This paper presents the recent progress on SOT-MRAM exploration of CMOS compatible high spin-Hall conductivity materials and structures.