학술논문
In0.53Ga0.47As MOSFETs with high channel mobility and gate stack quality fabricated on 300 mm Si substrate
Document Type
Conference
Author
Source
2015 Symposium on VLSI Technology (VLSI Technology) VLSI Technology (VLSI Technology), 2015 Symposium on. :T204-T205 Jun, 2015
Subject
Language
ISSN
0743-1562
2158-9682
2158-9682
Abstract
In 0.53 Ga 0.47 As channel MOSFETs were fabricated on 300 mm Si substrate. The epitaxial In 0.53 Ga 0.47 As channel layer exhibits high Hall electron mobility comparable to those grown on lattice matched InP substrates. Excellent device characteristics (SS∼95 mV/dec., I on /I off ∼10 5 , DIBL ∼51 mV/V at V ds = 0.5V for L g =150 nm device) with good uniformity across the wafer were demonstrated. The extracted high field effect mobility (µ EF = 1837 cm 2 /V-s with EOT ∼ 0.9 nm) is among the highest values reported for surface channel In 0.53 Ga 0.47 As MOSFETs.