학술논문

A Model of the V-T Characteristics for an OTFT Temperature Sensor
Document Type
Conference
Source
2021 International Semiconductor Conference (CAS) Semiconductor Conference (CAS), 2021 International. :93-96 Oct, 2021
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Temperature sensors
Analytical models
Temperature dependence
Sensitivity
Linearity
Voltage
Sensor phenomena and characterization
analytical model
flat-band voltage
organic thin film transistors
temperature sensors
thin film sensors
Language
ISSN
2377-0678
Abstract
An analytical model, able to describe the temperature dependence of the electrical characteristics of an organic thin film transistor (OTFT), is derived from the multiple trapping and release (MTR) theory related to an exponential distribution of tail states in the organic semiconductor layer at the insulator interface. The aim is to investigate the origin of the linearity of a temperature sensor based on a diode-connected OTFT, exhibiting a linearity of 99.93% and a sensitivity of about 110 mV/K, exceeding that of silicon-based sensors, when biased with a current of 16 nA. The model shows that the linear behavior is given by the compensation of two non-linear functions of temperature, one depending on the OTFT flat-band voltage, the other, varying with the bias current, on the interface state distribution.