학술논문
Performance Trade-Off of RFSOI Switches Under Scaled Bias Conditions
Document Type
Conference
Author
Dhar, Siddhartha; Monfray, Stephane; Gianesello, Frederic; Julien, Franck; Dura, Julien; Legrand, Charles-Alex; Amouroux, Julien; Gros, Bernadette; Welter, Loic; Charbuillet, Clement; Cathelin, Philippe; Canderle, Elodie; Vulliet, Nathalie; Escolier, Emmanuel; Antunes, Lucas; Rouchouze, Eric; Fornara, Pascal; Rivero, Christian; Bertrand, Guillaume; Chevalier, Pascal; Regnier, Arnaud; Gloria, Daniel; Fleury, Alain
Source
2023 IEEE 23rd Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Silicon Monolithic Integrated Circuits in RF Systems, 2023 IEEE 23rd Topical Meeting on. :38-40 Jan, 2023
Subject
Language
ISSN
2474-9761
Abstract
Over the years, RFSOI has emerged as dominant technology for building RF FEM modules with optimum cost and performance. RFSOI switches are typically designed using thick gate oxides with biasing up to 3. 3V to deliver minimum RON x COFF. With the strong push of operating digital devices at lower voltages, it would become necessary to evaluate the performance of the switch under such operating conditions. In this paper, we analyze the impact of RON x COFF of the switch in 200mm RFSOI technology, under scaled bias conditions and propose path for device optimization.