학술논문

Silicon Nitridation by Nitric Oxide (NO) for Ta2O5 Gate Dielectric Application in MOS Devices
Document Type
Conference
Source
29th European Solid-State Device Research Conference Solid-State Device Research Conference, 1999. Proceeding of the 29th European. 1:420-423 1999
Subject
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Silicon
Dielectric devices
MOS devices
Optical films
Oxidation
Substrates
MOSFETs
CMOS process
Dielectric constant
Temperature
Language