학술논문
Metal-Oxide-Metal Capacitor Simulation and Modeling by Virtual Fabrication
Document Type
Conference
Author
Source
2024 Conference of Science and Technology for Integrated Circuits (CSTIC) Science and Technology for Integrated Circuits (CSTIC), 2024 Conference of. :1-3 Mar, 2024
Subject
Language
Abstract
In this study, a Metal-Oxide-Metal capacitor is fabricated, calibrated, and modeled in a virtual fabrication platform. The capacitance performance is evaluated using different numbers of metal layers, metal fingers, and metal to metal space through execution of a full factorial DOE. A traditional compact model and a neural network model are used to fit the simulation data, respectively. The neural network model displayed a 0.81% fitting error, which was superior to that obtained with the compact model.