부산대학교 도서관

Ill-Nitride molecular beam epitaxy (MBE] is a flexible and fast research tool for development and demonstration of new alloys and device structures. While MBE is typically not used as a production technique for optoelectronic devices, excellent material quality can be achieved, as evidenced by extremely high IQE deep UV active regions [1], as well as laser quality active regions with emission wavelengths from the near UV to visible [2]. Ammonia MBE in particular also offers the ability to achieve highly doped layers with world record mobility [3]. In this paper, we will present recent research results using ammonia-assisted MBE that are relevant to developing high efficiency UV emitters.