학술논문
10W Ka Band MMIC Power Amplifiers based on InAlGaN/GaN HEMT Technology
Document Type
Conference
Author
Source
2019 49th European Microwave Conference (EuMC) European Microwave Conference (EuMC), 2019 49th. :824-827 Oct, 2019
Subject
Language
Abstract
This paper presents the measurement results of a MMIC power amplifiers (PA), based on InAlGaN/GaN HEMT technology, for Ka band applications. The three-stages MMIC is operating within a bandwidth of [25-31]GHz and demonstrate over this bandwidth a saturated output power of 40dBm. Each stage uses 8x50µm gate width HEMTs fabricated with a 0.15µm gate length on 70µm thick SiC substrate.