부산대학교 도서관

The impact of varying the GaN channel layer thickness ( ${t}_{\text {ch}}$ ) in InAlGaN/AlN/GaN HEMTs with C-doped AlGaN back barriers is investigated. ${t}_{\text {ch}}$ was 50, 100, and 150 nm, and the gate length of the fabricated HEMTs ranged from 50 to 200 nm. It is found that short-channel effects (SCEs) are significantly mitigated with a small ${t}_{\text {ch}}$ . For HEMTs with a gate length of 50 nm, the drain-induced barrier lowering changes from 40 to 93 mV/V as ${t}_{\text {ch}}$ is increased from 50 to 150 nm. On the other hand, it is shown that dispersive effects are more severe for a smaller ${t}_{\text {ch}}$ , as demonstrated by a sixfold increase in the dynamic ON-resistance for ${t}_{\text {ch}} = 50$ nm compared to ${t}_{\text {ch}} = 150$ nm. The tradeoff between dispersion and SCEs is reflected in large-signal measurements at 30 GHz. The 50-nm channel, mainly limited by dispersion, exhibits an output power of 3.5 W/mm. The thicker channels reach a maximum of around 5 W/mm, but for different gate lengths due to the difference in severity of the SCEs. This paper elucidates the interplay between SCEs and dispersion related to ${t}_{\text {ch}}$ , its consequences for the large-signal performance and for the limitation in downscaling of the gate length.