학술논문
An Enhancement-Mode Algan/GaN HEMT with Island-Ohmic p-GaN Featuring Stable Threshold voltage and Large Gate Swing
Document Type
Conference
Author
Source
2024 36th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2024 36th International Symposium on. :168-171 Jun, 2024
Subject
Language
ISSN
1946-0201
Abstract
A novel AlGaN/GaN HEMT based on an Island-Ohmic p-GaN gate (IO-PGaN) structure is proposed. Thanks to the Island-Ohmic, the “floating” p-GaN is connected with the gate terminal via the heavily doped p++-GaN island. Therefore, the net charges generated in the p-GaN region under the gate or drain stress conditions, could be easily compensated by supplying holes via the ohmic gate structure, resulting in a stable threshold voltage (V TH ). Meanwhile, a SiO 2 side wall is intentionally formed to achieve a moderate E-field at the island corner, and a JFET-like structure formed by the Schottky-metal/p-GaN junction delivers a self-limited gate leakage.