부산대학교 도서관

A novel AlGaN/GaN HEMT based on an Island-Ohmic p-GaN gate (IO-PGaN) structure is proposed. Thanks to the Island-Ohmic, the “floating” p-GaN is connected with the gate terminal via the heavily doped p++-GaN island. Therefore, the net charges generated in the p-GaN region under the gate or drain stress conditions, could be easily compensated by supplying holes via the ohmic gate structure, resulting in a stable threshold voltage (V TH ). Meanwhile, a SiO 2 side wall is intentionally formed to achieve a moderate E-field at the island corner, and a JFET-like structure formed by the Schottky-metal/p-GaN junction delivers a self-limited gate leakage.