학술논문
Transfer of AlGaN/GaN RF-devices onto diamond substrates via van der Waals bonding
Document Type
Conference
Author
Source
2017 12th European Microwave Integrated Circuits Conference (EuMIC) Microwave Integrated Circuits Conference (EuMIC), 2017 12th European. :25-28 Oct, 2017
Subject
Language
Abstract
We present a new bonding process for gallium nitride (AlGaN/GaN) devices from Si onto diamond substrates. In our technology AlGaN/GaN-devices are transferred from silicon (Si) onto single (SCD) and polycrystalline diamond (PCD) substrates by van der Waals bonding. Load-pull measurements on Si and sCd at 3 GHz and 50 V drain bias show comparable power-added-efficiency (PAE) and output power (Pout) levels. Also, comparisons of 2×1 mm GaN-diodes on Si, PCD, and SCD reveal significantly increased power levels. In summary, we show a promising new GaN-on-diamond technology for future high-power, microwave GaN-device applications.