학술논문
Characterisation of ultra-shallow junctions using advanced SIMS, SRP and HRTEM techniques
Document Type
Conference
Author
Source
1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144) Ion implantation technology Ion Implantation Technology Proceedings, 1998 International Conference on. 2:688-691 vol.2 1998
Subject
Language
Abstract
B+/1 keV implants have been studied using SIMS, looking in detail at the as-implanted depth profile, to distinguish the true dopant distribution from measurement artefacts. Different SIMS machines and ion energies have been compared, and wafer pre-processing before analysis used to examine the low concentration profile tail. Annealed samples have also been studied, and high depth resolution analysis carried out of the near surface fine structure. The data has been compared with SRP and HRTEM, and used to assign peaks and discontinuities in the profile to dopant states and interfaces.