학술논문
A 1 V Bandgap Reference in 7-nm FinFET with a Programmable Temperature Coefficient and an Inaccuracy of ±0.2% from −45°C to 125°C
Document Type
Conference
Author
Source
ESSCIRC 2018 - IEEE 44th European Solid State Circuits Conference (ESSCIRC) European Solid State Circuits Conference (ESSCIRC), ESSCIRC 2018 - IEEE 44th. :78-81 Sep, 2018
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Language
Abstract
A 1-V precision voltage reference in 7-nm FinFET CMOS is presented. It allows to control a temperature coefficient of the generated voltage. Proposed trim techniques, favored for short test times, help to achieve good accuracy in spite of the challenges posed by the scaled technology and a ‘hostile’ SoC environment. Two 2nd-order curvature compensation techniques are implemented to achieve high accuracy. Measurement results show a max inaccuracy of ±0.2% with temperature coefficient as low as ~6ppm/° C over temperature range of 170° C (−45° C to 125° C). Furthermore, the temperature coefficient is digitally programmable between −7mV/100°C to +8mV/100°C, thus enabling temperature compensation for various sub-blocks within an FPGA. Line regulation is 0.1%.V. The whole design occupies 0.078 mm 2 .