학술논문

16.3 A 330mW 14b 6.8GS/s dual-mode RF DAC in 16nm FinFET achieving −70.8dBc ACPR in a 20MHz channel at 5.2GHz
Document Type
Conference
Source
2017 IEEE International Solid-State Circuits Conference (ISSCC) Solid-State Circuits Conference (ISSCC), 2017 IEEE International. :280-281 Feb, 2017
Subject
Components, Circuits, Devices and Systems
Clocks
Latches
Computer architecture
Power generation
Radio frequency
Inverters
FinFETs
Language
ISSN
2376-8606
Abstract
Direct-RF synthesis has gained increasing attention in recent years [1] [2] as it simplifies the transmitter system by eliminating the intermediate frequency stage. It also offers the opportunity to address the extensive range of cellular bands with the same architecture and building blocks. Direct synthesis of carriers in the 5 to 6GHz unlicenced bands remains a challenge for RF-DACs operating in the 1 st Nyquist band, as sampling rates in excess of 12GS/s are required. A more power efficient way to synthesize directly these frequencies is to use wideband mixing-DACs, which increase the output power in the 2 nd and 3 rd Nyquist bands [3]. In [3] the mixing is done using the quad-switch configuration, which doubles the number of switches and drivers, directly impacting the overall DAC width. In [4] the mixer is inserted in-line between the current cell switch and the output cascode, which requires additional headroom in the output stage. Both implementations impact the overall performance and power of the DAC even when the mixing operation is not used.