학술논문

40GHz Low Noise Receiver Circuits using BCB Above-Silicon Technology Optimized for Millimeter-wave Applications
Document Type
Conference
Source
2007 IEEE Radio Frequency Integrated Circuits (RFIC) Symposium Radio Frequency Integrated Circuits (RFIC) Symposium, 2007 IEEE. :137-140 Jun, 2007
Subject
Fields, Waves and Electromagnetics
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Circuit noise
Millimeter wave circuits
Millimeter wave technology
Noise figure
Oscillators
Heterojunction bipolar transistors
Gain
Noise measurement
Low-noise amplifiers
BiCMOS integrated circuits
Above-IC
BCB
BiCMOS
HBT
Low Noise Amplifier
local oscillator
mixer
millimeter-wave range
noise
SiGe
Language
ISSN
1529-2517
2375-0995
Abstract
This paper presents a low area, low consumption, 40GHz Low Noise Amplifier (LNA), a down-converter and an oscillator, from which the performance of a 40GHz wireless receiver can be estimated. The circuits were realized using a post-processing BCB above-IC technology and 0.13μm SiGe:C BiCMOS HBT process, and their performance are compared with those obtained on circuits without post-processing. The 40GHz LNA exhibits a noise figure of 2.2dB with an associated gain of 17dB and a DC power consumption of 20mW. The measured double-sideband noise figure of the mixer is 4.7dB with an associated conversion gain of 6.5dB and a DC consumption of 4.8mW. The 40GHz oscillator has a phase noise of -107dBc/Hz at 1MHz offset from the carrier measured on a 50 Ohms load. The oscillator output power is 0dBm for a DC consumption of 15mW. Beyond these never published results in term of noise figure at 40GHz, this post-processing technology gives the opportunity to determine the intrinsic noise figure value of the active device (HBT).