학술논문
Igbt Parameter Extraction for the Hefner IGBT Model
Document Type
Conference
Author
Source
Proceedings of the 41st International Universities Power Engineering Conference Universities Power Engineering Conference, 2006. UPEC '06. Proceedings of the 41st International. 2:613-617 Sep, 2006
Subject
Language
Abstract
The Insulated Gate Bipolar Transistor(IGBT) is now widely used in many power electronics circuits. An accurate IGBT model is very important and useful to simulate these power electronics circuits to foresee the circuit behaviour and device behaviour before its implementation. Hefner IGBT model is one of the very good IGBT analytical models available for circuit simulation. This model requires IGBT parameters and those can be extracted experimentally. Two experiment setups are needed and few different tests have to be carried out to extract IGBT parameters required for the Hefner model. In this paper, work carried out to extract eleven different parameters of 3.3kV/1200A IGBT is explained for the Hefner model.