학술논문
Advantages of ALD over evaporation deposition for high-k materials integration in high power capacitive RF MEMS
Document Type
Conference
Author
Source
2017 19th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS) Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 2017 19th International Conference on. :1237-1240 Jun, 2017
Subject
Language
ISSN
2167-0021
Abstract
We report a study over a wide range of high-K dielectric materials (Al x O y , HfO x , TiO x …) deposited by different techniques (Evaporation, ALD, PEALD…) for high power RF applications. Main results show that ALD technique is matching the McPherson trend based on thermochemical prediction. Furthermore ALD materials are promising to meet high power requirements for capacitive RF MEMS switches. As a result, Thermal ALD HfO 2 was integrated in high power capacitive RF MEMS switches in order to improve their RF performances, power handling and reliability.