학술논문
The Super-Lattice Castellated Field Effect Transistor (SLCFET): A novel high performance Transistor topology ideal for RF switching
Document Type
Conference
Author
Source
2014 IEEE International Electron Devices Meeting Electron Devices Meeting (IEDM), 2014 IEEE International. :11.5.1-11.5.4 Dec, 2014
Subject
Language
ISSN
0163-1918
2156-017X
2156-017X
Abstract
NGES reports the development of a novel transistor structure based on a GaN super-lattice channel with a 3D gate, named the SLCFET (Super-Lattice Castellated Field Effect Transistor). Transistor measurements provided median values of I MAX >2.7 A/mm, V PINCH = −8V, with R ON =0.41 Ω-mm and C OFF =0.19 pF/mm, for an RF switch FOM of F CO =2.1 THz.