학술논문

Finite-element thermal modeling of N-based HEMT structures
Document Type
Conference
Source
2008 ROCS Workshop [Reliability of Compound Semiconductors Workshop] ROCS Workshop, 2008 [Reliability of Compound Semiconductors Workshop]. :15-24 Oct, 2008
Subject
Components, Circuits, Devices and Systems
Finite element methods
HEMTs
Gallium nitride
Thermal management
Aluminum gallium nitride
Substrates
Passivation
Temperature distribution
Boundary conditions
Fingers
Language
Abstract
The aim of this paper is to show and discuss results of 3D finite-element thermal simulation of GaN HEMT structures. HEMTs differing by geometry, substrate material, passivation, and heat removal strategy are simulated and compared in order to give a picture of the complex interplay of factors that must be reckoned with for proper thermal management.