학술논문
Electrical characterization of ALD Al2O3 - HfO2 and PECVD Al2O3 passivation layers for p-type CZ-Silicon PERC solar cells
Document Type
Conference
Author
Source
2012 38th IEEE Photovoltaic Specialists Conference Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE. :001077-001082 Jun, 2012
Subject
Language
ISSN
0160-8371
Abstract
This work characterizes p-type Silicon surface passivation using a high-k material (Al 2 O 3 or HfO 2 ) combining capacitance voltage (CV) and lifetime measurements.