학술논문
Control of the Fabrication Steps of InP MIS Transistors by Means of Scanning Photoluminescence Measurements
Document Type
Conference
Source
ESSDERC '88: 18th European Solid State Device Research Conference Solid State Device Research Conference, 1988. ESSDERC '88. 18th European. :c4-431-c4-436 Sep, 1988
Subject
Language
Abstract
We show the efficiency of scanning photoluminescence measurements for monitoring the quality, homogeneity and reproducibility of the starting wafers and processed substrates after each technological step during the realization of InP MIS transistors. Owing to this new technique, which is noninvasive, contactless and fast, we have obtained a considerable improvement of the fabricated devices.