학술논문

Polarization switching and interface charges in BEOL compatible Ferroelectric Tunnel Junctions
Document Type
Conference
Source
ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC) Solid-State Device Research Conference (ESSDERC), ESSDERC 2021 - IEEE 51st European. :255-258 Sep, 2021
Subject
Components, Circuits, Devices and Systems
Photonics and Electrooptics
Polarization
Conferences
Memristors
Europe
Switches
Tunneling
Dielectrics
Language
Abstract
We here report a joint experimental and theoretical analysis of polarization switching in ferroelectric tunnel junctions. Our results show that the injection and trapping of charge into the ferroelectric-dielectric stack has a large influence on the polarization switching. Our results are relevant to the physical understanding and to the design of the devices, and for both memory and memristor applications.