학술논문
Hybrid FeRAM/RRAM Synaptic Circuit Enabling On-Chip Inference and Learning at the Edge
Document Type
Conference
Author
Source
2023 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2023 International. :1-4 Dec, 2023
Subject
Language
ISSN
2156-017X
Abstract
This paper presents an experimental demonstration of a hybrid FeRAM/RRAM synaptic circuit. The circuit incorporates Metal-Ferroelectric-Metal stacks, which exhibit native FeRAM behavior and function as RRAMs after undergoing a forming operation. By leveraging the unique advantages of FeRAMs, such as ultra-low switching energy, in combination with the non-disruptive (infinite) reading capability of RRAMs, this circuit enables efficient on-chip inference and learning at the Edge.