학술논문

Advanced GaAs power amplifier architecture linearized with a post-distortion method
Document Type
Conference
Source
2014 IEEE MTT-S International Microwave Symposium (IMS2014) Microwave Symposium (IMS), 2014 IEEE MTT-S International. :1-4 Jun, 2014
Subject
Fields, Waves and Electromagnetics
Pre-distortion
post-distortion
stacked architecture
power amplifier
LTE
Language
ISSN
0149-645X
Abstract
Linearizing power amplifiers (PA) using digital pre-distortion (DPD) results in the use of a pre-distorted driving input signal that exhibits higher peak-to-average power ratio (PAPR). This results in a decrease in the PA efficiency which is dependent on the level of output power back-off required. This work proposes a new linearization architecture based on a new “post-distortion” method for power amplifier (PA) nonlinearity compensation. The proposed architecture allows for PA linearization with optimal input signal drive level to avoid efficiency degradation. A pseudomorphic high electron-mobility transistor (pHEMT) dual input PA architecture is also introduced and shown to be suitable for the proposed linearization approach. In comparison to classic pre-distortion techniques, the proposed post-distortion improves the output power by 2 dB and the drain efficiency by 9% in the presence of a 20MHz LTE up-link signal.