학술논문
Comparison of Experimentally Extracted Top and Edge Contact Resistivity by TLM Structure with Two-step Sulfurization Nb-Doped MoS2
Document Type
Conference
Source
2019 Electron Devices Technology and Manufacturing Conference (EDTM) Electron Devices Technology and Manufacturing Conference (EDTM), 2019. :191-193 Mar, 2019
Subject
Language
Abstract
In this work, we adopted two kinds of TLM structures to extract the top (vertical) and the edge (horizontal) contact resistances of Metal/MoS 2 directly from experimental results. Novel two-step sulfurization scheme was conducted for forming Nb-doped MoS 2 films on the sapphire substrate. We found the edge contact resistivity $\left( \rho _ { \mathrm { C } _ { - } } \text { edge } \right)$ was almost 2 orders of magnitude lower than $\left( \mathrm { P } \mathrm { C } _ { - } \mathrm { top } \right)$. Our approach seems to be a reliable and simple way to precisely determine the edge and top contact resistances of the Metal/2D contact.