학술논문
Pattern dependent plasma charging effect in high aspect ratio 3D NAND architecture
Document Type
Conference
Author
Source
2016 27th Annual SEMI Advanced Semiconductor Manufacturing Conference (ASMC) Advanced Semiconductor Manufacturing Conference (ASMC), 2016 27th Annual SEMI. :358-360 May, 2016
Subject
Language
ISSN
2376-6697
Abstract
Pattern dependent charging effect is explored in this study. Due to increased film thickness in 3D NAND structure, a derivative problem-the plasma-induced charging damage is enhanced during high aspect ratio (HAR) etching. In this paper, several effective methods are demonstrated to alleviate the impact of profile distortion due to charging effect while etching high aspect ratio (>14) trenches.