학술논문
Numerical Simulation of Thermal Conductivity of SiNW–SiGe0.3 Composite for Thermoelectric Applications
Document Type
Periodical
Author
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 67(5):2088-2092 May, 2020
Subject
Language
ISSN
0018-9383
1557-9646
1557-9646
Abstract
The electron band structure and phonon energy dispersion of the silicon nanowires (SiNWs) embedded in SiGe 0.3 (SiNW–SiGe 0.3 composite) are simulated by using the effective mass Schrödinger equation and the elastodynamic wave equation, respectively. Then, the TE properties of the SiNW–SiGe 0.3 composite are investigated by the Landauer approach. The simulation shows the contribution from electrons/holes on both electrical conductance and thermal conductance increases few times by introducing SiNWs, but on the other hand, lattice thermal conductance reduces around two orders. These results are consistent with the experimental measurement and indicates that much lower lattice thermal conductance dominates the TE performance of the SiNW–SiGe 0.3 composite.