학술논문
Program charge effect on random telegraph noise amplitude and its device structural dependence in SONOS flash memory
Document Type
Conference
Author
Source
2009 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2009 IEEE International. :1-4 Dec, 2009
Subject
Language
ISSN
0163-1918
2156-017X
2156-017X
Abstract
Nitride program charge effects on random telegraph noise (RTN) in SONOS flash cells are investigated. We measure and simulate RTN amplitudes in floating gate flash, planar SONOS, and FinFET SONOS cells. We find that a planar SONOS has a wide spread in RTN amplitude after programming while a floating gate flash cell has identical RTN amplitude in erase and program states. The spread of program-state RTN amplitudes in a planar SONOS is attributed to a current-path percolation effect caused by random discrete nitride charges. The program-state RTN spread can be significantly reduced in FinFET SONOS.