학술논문

New Approaches for the Contact Theory and new Doping Profile Suggestion for BLM Metallization
Document Type
Conference
Source
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) Photovoltaic Energy Conversion (WCPEC), 2018 IEEE 7th World Conference on. :0983-0988 Jun, 2018
Subject
Aerospace
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Power, Energy and Industry Applications
Glass
Silver
Silicon
Etching
Photovoltaic cells
Electrodes
Language
Abstract
The traditional contract theory of solar cell does not consider metal ion diffusion effect of paste during the firing-through (FT) metallization process. In this paper, we have designed 3 pastes that contain the simple glass composition to study the direct and indirect electron transfer path and the specially designed Beyond Metallization Limit (BML) paste to investigate the metal ion diffusion effect on the crystalline silicon solar cell. The glass layer masking and etching ability for the direct path and silver dissolution ability into glass for indirect path were thoroughly examined with 3 pastes. From the observation, we have revealed that lead oxide has higher etching ability while tellurium dioxide has higher silver dissolution ability in the glass composition. The specially designed BLM paste has recorded efficiency over 18% at a firing temperature of 100°C lower than the normal firing temperature. The BLM paste damaged the P-N junction stability at high firing temperature. But the first contact resistance value between two first patterns in conventional TLM method had the lower value than that of baseline. Based on this research, we have concluded the contact resistance has to be consisted of direct path, indirect path and the doping concentration compensation effect by the metal ion diffusion on crystalline silicon solar cell. This postulation could have the possibility to break down the limitation the conventional contact theory. Finally, we have suggested the ultra-low surface doping concentration and ultra-long junction depth to study the metal ion diffusion effect further.