학술논문

A D-Band Two-Way Differential Power Divider on 65-nm CMOS Process
Document Type
Periodical
Author
Source
IEEE Microwave and Wireless Technology Letters IEEE Microw. Wireless Tech. Lett. Microwave and Wireless Technology Letters, IEEE. 34(3):279-282 Mar, 2024
Subject
Fields, Waves and Electromagnetics
Power dividers
Impedance
Wireless communication
Microwave circuits
Microwave communication
Loading
CMOS process
Capacitive loading
CMOS
D-band
differential power divider
millimeter wave (mm wave)
Language
ISSN
2771-957X
2771-9588
Abstract
A CMOS two-way differential power divider is proposed to reduce the insertion loss (IL) and size in the $D$ -band. The power distribution is achieved using a low-loss differential power divider with a capacitive loading structure, without modifying the matching network of the unit devices. In addition, the degradation of the IL due to the parasitic inductance of groundings is made negligible by using the virtual ground of the differential structure. The impedance of the differential-mode transmission line (TL), which is half that of the single-ended line, is designed in the impedance range achievable in the bulk CMOS process, utilizing capacitive loading techniques. The 3-D electromagnetic (EM) simulation results of a two-way power divider show a low IL within 0.35 dB at 110–170 GHz. The proposed power divider achieves a measured minimum IL of 0.32 dB at 160 GHz with a core size of 0.0075 mm2.