학술논문
InGaAs inversion layers band structure, electrostatics, and mobility modeling based on 8 Band k · p theory
Document Type
Conference
Author
Source
2014 44th European Solid State Device Research Conference (ESSDERC) Solid State Device Research Conference (ESSDERC), 2014 44th European. :114-117 Sep, 2014
Subject
Language
ISSN
1930-8876
2378-6558
2378-6558
Abstract
8 band k · p method is used to calculate subband structures of InGaAs inversion layers accounting for strong coupling between conduction and valence bands around Γ point as well as quantum confinement. Inversion layer mobility is computed employing Kubo-Greenwood formalism. Scatterings due to acoustic phonons, polar optical phonons, ionized impurities, interface fixed charges, surface roughness, and alloy disorder are included. The simulated low-field electron mobility results are in good agreement with in-house experimental data with and without an InP capping layer.