학술논문

A 2–24 GHz SiGe HBT Cascode Non-uniform Distributed Power Amplifier Using A Compact, Wideband Two-Section Lumped Element Output Impedance Transformer
Document Type
Conference
Source
2021 IEEE MTT-S International Microwave Symposium (IMS) Microwave Symposium (IMS), 2021 IEEE MTT-S International. :842-845 Jun, 2021
Subject
Fields, Waves and Electromagnetics
Power transmission lines
Power amplifiers
Heterojunction bipolar transistors
Microwave amplifiers
Impedance
Circuit faults
Inductors
BiCMOS
broadband
cascode
distributed power amplifier (DPA)
HBT
lumped element
non-uniform
phased array
SiGe
transformer
transmission line (TL)
wideband
Language
ISSN
2576-7216
Abstract
This paper presents a 2–24 GHz SiGe HBT cascode, non-uniform distributed power amplifier (NDPA). Optimum impedances at each SiGe HBT cascode are obtained by simultaneous characteristic impedance scaling of the collector transmission lines (TLs) and SiGe HBT emitter area tapering. To further boost output power (Pout), a compact, wideband two-section lumped-element output impedance transformer is proposed, which lowers a load impedance from 50 to 25 Ω. Each λ/4 transformer is realized by four cascaded C-L-C π-networks integrated into a single symmetric inductor, for its compact size and high passive efficiency. The proposed SiGe HBT cascode NDPA achieves a saturated Pout of 21.3 dBm at 8 GHz and peak power added efficiency (PAE) of 21.7% at 4 GHz, with its 3 dB bandwidth and PAE higher than 12.2% from 2 to 24 GHz.