학술논문

Tensile-strained InGaAs/InGaAsP quantum-well optical amplifiers with a wide spectral gain region at 1.55 mu m
Document Type
Periodical
Source
IEEE Photonics Technology Letters IEEE Photon. Technol. Lett. Photonics Technology Letters, IEEE. 5(5):520-522 May, 1993
Subject
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Indium gallium arsenide
Quantum wells
Stimulated emission
Semiconductor optical amplifiers
Optical amplifiers
Laser tuning
Optical filters
Laser transitions
Quantum well lasers
Tunable circuits and devices
Language
ISSN
1041-1135
1941-0174
Abstract
A tensile-strained InGaAsP/InP multi-quantum-well optical amplifier is constructed which has >or=92 nm bandwidth at 16-dB gain for 50-mA drive current. The wide gain bandwidth is a result of both n=1 and n=2 contributions from the e to 1h transition. These results suggest wide tunability for lasers made from this material.ETX