부산대학교 도서관

In this work, we systematically investigated the effect of oxygen treatment on the material and electrical properties of Indium-Tungsten-Oxide thin film transistors (IWO-TFTs) by O 2 plasma and rapid thermal oxidation (RTO). With RTO treatment, the electrical characteristics of the IWO-TFTs remarkably depicted a subthreshold swing ( S.S. ) of 122.5 mV/decade, an I on / I off of around 4.7×10 8 , and more superior immunity stress-induced degradation. According to the X-ray photoelectron spectroscopy (XPS) results under the RTO treatment condition, the lowest vacancy content and the highest Tungsten-Oxide (W-O) bond content were observed. It indicated that the RTO treatment was more effective in reducing the number of oxygen vacancies and stabilizing the bonding structure of IWO films. As a result, the IWO TFTs subjected to RTO treatment exhibited improved performance and enhanced reliability.